Vapor deposition apparatus

ABSTRACT

A vapor deposition apparatus that includes a first region having a first injecting unit for injecting a first raw material and a second region having a second injecting unit for injecting a second raw material, wherein the second injecting unit comprises a plasma generation unit, wherein the plasma generation unit comprises a plasma generator, a corresponding surface surrounding the plasma generator, and a plasma generation space formed between the plasma generator and the corresponding surface, and wherein distances between the plasma generator and the corresponding surface periodically vary along an outer circumference of the plasma generator. In the vapor deposition apparatus, the quality of thin film is increased by forming stable volume plasma through set positions where the plasma is generated in the plasma generation space.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2012-0092544, filed on Aug. 23, 2012, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND

1. Field

The following description relates to a vapor deposition apparatus.

2. Description of the Related Art

Semiconductor devices, display devices, and other electronic devices mayinclude a plurality of thin films. Various suitable methods may be usedto form the thin films, one of which is a vapor deposition method. Thevapor deposition method uses at least one gas as a raw material to formthe thin films. Here, the vapor deposition method may include a chemicalvapor deposition (CVD) method, an atomic layer deposition (ALD) method,or the like.

According to the ALD method, after a raw material is injected andpurged/pumped, a single layer or a composite layer is adsorbed to asubstrate, and then another raw material is injected using plasma andpurged/pumped, so that a desired single or composite atomic layer isformed.

Plasma is formed by applying a voltage between a first electrode havinga bar shape and a second electrode that has a cylindrical shape and islocated outside the first electrode with a flow of a gas between thefirst and second electrodes. At this point, if minute protrusions areirregularly formed on surfaces of the electrodes, a rapid ionization ofthe gas may locally occur, and thus, an arc discharge may be generated.The arc discharge may deteriorate the uniformity of an atomic layerformed on the substrate.

SUMMARY

An aspect of an embodiment of the present invention is directed toward avapor deposition apparatus that generates uniform plasma.

According to an embodiment of the present invention, there is provided avapor deposition apparatus for depositing a thin film on a substrate,the vapor deposition apparatus including: a first region having a firstinjecting unit for injecting a first raw material and a second regionhaving a second injecting unit for injecting a second raw material,wherein the second injecting unit includes a plasma generation unit,wherein the plasma generation unit includes a plasma generator, acorresponding surface surrounding the plasma generator, and a plasmageneration space formed between the plasma generator and thecorresponding surface, and wherein distances between the plasmagenerator and the corresponding surface periodically vary along an outercircumference of the plasma generator.

A plurality of protrusions may be formed on a surface of the plasmagenerator, and the protrusions may form a regular pattern.

A plurality of protrusions may be formed on the corresponding surface,and the protrusions may form a regular pattern.

A plurality of first protrusions may be formed on a surface of theplasma generator, and a plurality of second protrusions may be formed onthe corresponding surface, wherein the first protrusions and the secondform a regular pattern.

The first protrusions and the second protrusions may be located todirectly face each other.

The plasma generator may rotate and the generation of plasma may beautomatically stopped at a position where the first protrusions and thesecond protrusions directly face each other.

The first protrusions and the second protrusions may be locatedalternately.

The first region may include a first purging unit for injecting a purgegas, and a first exhausting unit for performing a pumping operation anddisposed between the first injecting unit and the first purging unit.

The vapor deposition apparatus may further include a first curtain unitdisposed between the first purging unit of the first region and thesecond injecting unit of the second region.

The second region may include a second purging unit for injecting apurge gas and a second exhausting unit for performing a pumpingoperation and disposed between the second injecting unit and the secondpurging unit.

The second region may further include a second curtain unit and thesecond purging unit may be disposed between the second exhausting unitand the second curtain unit.

The second injecting unit further includes a plurality of slits arrayedin one direction and formed to pass the second raw material in a radicalform generated in the plasma generation space.

According to another embodiment of the present invention, there isprovided a vapor deposition apparatus including: a plurality of firstregions that each includes a first injecting unit for injecting a firstraw material, a first purging unit for injecting a purge gas, and afirst exhausting unit for performing a pumping operation and disposedbetween the first injecting unit and the first purging unit; and aplurality of second regions that each includes a second injecting unitfor injecting a second raw material, a second purging unit for injectinga purge gas, and a second exhausting unit for performing a pumpingoperation and disposed between the second injecting unit and the secondpurging unit, wherein the second injecting unit includes a plasmageneration unit, wherein the plasma generation unit includes a plasmagenerator, a corresponding surface surrounding the plasma generator, anda plasma generation space formed between the plasma generator and thecorresponding surface, and wherein protrusions are formed on at leastone of a surface of the plasma generator or the corresponding surface.

The protrusions may form a regular pattern.

The protrusions may include first protrusions formed on the surface ofthe plasma generator, and second protrusions formed on the correspondingsurface, wherein the first protrusions and the second protrusions mayform a regular pattern.

The first protrusions and the second protrusions may be formed todirectly face each other.

The plasma generator may rotate and the generation of plasma may beautomatically stopped at a position where the first protrusions and thesecond protrusions directly face each other.

The first protrusions and the second protrusions may be locatedalternately.

The second injecting unit further includes a plurality of slits arrayedin one direction and formed to pass the second raw material in a radicalform generated in the plasma generation space.

The vapor deposition apparatus may further include: a first curtain unitdisposed between the first purging unit of the first region and thesecond injecting unit of the second region; and a second curtain unitdisposed between the second purging unit of the second region and thefirst injecting unit of the first region.

The first regions and the second regions may be alternately disposedwith each other.

In the vapor deposition apparatus according to an embodiment, thequality of thin film is increased by forming stable volume plasmathrough set or predetermined positions where the plasma is generated inthe plasma generation space.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a schematic cross-sectional view of a vapor depositionapparatus according to an embodiment of the present invention;

FIG. 2 is a magnified view of P of FIG. 1;

FIG. 3 is a schematic drawing of slits of the vapor deposition apparatusof FIG. 1, according to an embodiment of the present invention; and

FIGS. 4 through 6 are modified versions of the plasma generation unit ofthe vapor deposition apparatus of FIG. 1, according to embodiments ofthe present invention.

DETAILED DESCRIPTION

While exemplary embodiments are capable of various modifications andalternative forms, embodiments thereof are shown by way of example inthe drawings and will herein be described in more detail. It should beunderstood, however, that there is no intent to limit exemplaryembodiments to the particular forms disclosed, but on the contrary,exemplary embodiments are to cover all modifications, equivalents, andalternatives falling within the scope of the invention. In describingthe present invention, when descriptions with respect to related knownfunction and configuration may make the scope of the present inventionunclear, the descriptions thereof will be omitted.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, regions, and/or parts,these elements, regions, and/or parts should not be limited by theseterms. These terms are only used to distinguish one element fromanother, and not denote sequence, up and down, or superiority.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention.The singular forms include the plural forms unless the context clearlyindicates otherwise. It will further be understood that the terms“comprise” and/or “comprising” when used in this specification, specifythe presence of stated features, integers, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, operations, elements, components, and/orgroups thereof. As used herein, the term “and/or,” includes any and allcombinations of one or more of the associated listed items.

Hereafter, the present invention will be described more fully withreference to the accompanying drawings, in which exemplary embodimentsof the present invention are shown.

FIG. 1 is a schematic cross-sectional view of a vapor depositionapparatus 100 according to an embodiment of the present invention. FIG.2 is a magnified view of P of FIG. 1. FIG. 3 is a schematic drawing ofslits of the vapor deposition apparatus of FIG. 1.

Referring to FIG. 1, the vapor deposition apparatus 100 includes a firstregion 110 and a second region 120. The first region 110 and the secondregion 120 respectively may be formed in plural numbers, and may bealternately disposed with each other.

Also, on a lower side of the vapor deposition apparatus 100, a substrate1 is sequentially moved under the first region 110 and the second region120 by relatively moving with respect to the vapor deposition apparatus100. For example, the substrate 1 may move in an X direction and adesired thin film may be formed on the moving substrate 1 by using thevapor deposition apparatus 100.

The first region 110 may include a first injecting unit 111, a firstexhausting unit 112, a first purging unit 113, and a first curtain unit114.

The first injecting unit 111 injects a first raw material for adeposition. More specifically, the first injecting unit 111 injects agas type first raw material in a direction towards the substrate 1.

The first purging unit 113 injects a purge gas towards the substrate 1.The first purging unit 113 injects a gas that does not affect thedeposition, for example, an argon gas or a nitrogen gas towards thesubstrate 1.

The first exhausting unit 112 is disposed between the first injectingunit 111 and the first purging unit 113. The first exhausting unit 112pumps a physical adsorption layer that is separated from the substrate 1by a purge gas in a direction indicated by arrows in FIG. 1.

The first curtain unit 114 is formed close to the second region 120. Thefirst curtain unit 114 injects a curtain gas that may be an inert gasthat does not affect the deposition process. The first curtain unit 114is formed close to the second region 120 to block a material that isgenerated in the first region 110 or is injected to the first region 110from penetrating into the second region 120 during a deposition process,and also, to block a material that is generated in the second region 120or is injected to the second region 120 from penetrating into the firstregion 110.

A first blocking unit A 131 is formed to separate the first exhaustingunit 112 from the first injecting unit 111 and the first exhausting unit112 from the first purging unit 113, which are adjacent to each other.That is, the first exhausting unit 112 and the first injecting unit 111do not have a common region, and also, the first exhausting unit 112 andthe first purging unit 113 do not have a common region.

Also, in order to separate the first injecting unit 111 from adjacentother gas injecting units, for example, a second curtain unit 124 formedon a left side of the first region 110, a second blocking unit A 141 maybe formed between the first injecting unit 111 and the second curtainunit 124 disposed on the left side of the first region 110. Also, inorder to separate the first purging unit 113 from the first curtain unit114 that is adjacent to the first purging unit 113, a third blockingunit A 151 may be formed between the first purging unit 113 and thefirst curtain unit 114.

The second region 120 may include a second injecting unit 130, a secondexhausting unit 122, a second purging unit 123, and the second curtainunit 124.

The second injecting unit 130 injects a second raw material fordeposition. Also, the second injecting unit 130 includes a plasmageneration unit 200 for generating plasma.

FIG. 2 shows a magnified version of the plasma generation unit 200.Referring to FIG. 2, the plasma generation unit 200 may include a plasmagenerator 210, a corresponding surface 220, and a plasma generationspace 230 formed between the plasma generator 210 and the correspondingsurface 220.

The plasma generator 210 may be an electrode to which a voltage isapplied. Also, the corresponding surface 220 is formed to surround theplasma generator 210, and may be a grounded electrode. However, thepresent invention is not limited thereto, and the plasma generator 210may be grounded and a voltage may be applied to the correspondingsurface 220.

Distances between the plasma generator 210 and the corresponding surface220 periodically vary according to an outer circumference of the plasmagenerator 210.

For example, as depicted in FIG. 2, a plurality of protrusions 212 maybe formed on a surface of the plasma generator 210. The protrusions 212extend in a length direction of the plasma generator 210 and may beformed as one body with the plasma generator 210. Also, the protrusions212 form a periodical pattern with the same shape relative to eachother.

Each of the protrusions 212 may include a curved surface having a set orpredetermined curvature. If each of the protrusions 212 has a curvedsurface having the set or predetermined curvature, electric field isconcentrated on each of the uppermost points, and then, a dischargesimilar to a pin-to-plane corona discharge may occur between theprotrusions 212 and the corresponding surface 220. That is, as it isseen from the Warburg's law, the largest discharge current is generatedat a position where a distance between the uppermost point of one of theprotrusions 212 and the corresponding surface 220 is the smallest. Thelonger the distance between the uppermost point of the protrusion 212and the corresponding surface 220, the lower the value of the dischargecurrent.

Also, a position of the corresponding surface 220 that corresponds to aregion between the two adjacent protrusions 212 may be an overlappingregion of a discharge current that is generated by the two protrusions212. The value of the discharge current may be controlled by presettinga plasma generation position in consideration of intensity of a currentapplied to the plasma generator 210 and a distance between the plasmagenerator 210 and the corresponding surface 220.

Accordingly, the current may have a constant value at each position ofthe corresponding surface 220 by forming the protrusions 212 thatdetermine the positions of plasma generation on a set or predeterminedsurface of the plasma generator 210, and thus, a stable volume plasmamay be formed in the plasma generation space 230 formed between theplasma generator 210 and the corresponding surface 220.

Also, when the plasma generator 210 has a rod shape, the generation ofan arc that may occur due to minute protrusions formed on a surface ofthe plasma generator 210 may be minimized by artificially forming theplural protrusions 212 on the plasma generator 210.

The plasma generator 210 may rotate in a direction, and accordingly, theplasma is uniformly distributed in the plasma generation space 230, andarc generation is prevented or reduced in the plasma generation space.

The same effect of the vapor deposition apparatus 100 described abovemay be applied to modified versions of plasma generators which will bedescribed below with reference to FIGS. 4 through 6.

A second raw material is injected from an upper side of the plasmageneration unit 200 and has a radical form after passing through plasma.The radical form second raw material is moved towards the substrate 1through slits 121.

FIG. 3 shows the slits 121 of the vapor deposition apparatus 100.Referring to FIG. 3, the slits 121 may be formed in plural numbers in alength direction of the plasma generator 210 with set or predetermineddistances from each other. The second raw material in a radical formthat is generated in the plasma generation space 230 may be uniformlysupplied onto the substrate 1 through the slits 121 without locallyconcentrating in the second injecting unit 130. Here, in FIG. 3, theslits 121 have a circular shape having the same size, but are notlimited thereto, that is, the slits 121 according to the currentembodiment may have various suitable sizes and shapes.

Referring to FIG. 1, the second purging unit 123 injects a purge gastowards the substrate 1. The second purging unit 123 injects a gas, forexample, an argon gas or a nitrogen gas that does not affect thedeposition towards the substrate

The second exhausting unit 122 is disposed between the second injectingunit 130 and the second purging unit 123. After injecting the second rawmaterial from the second injecting unit 130 towards the substrate 1, apurge gas is injected towards the substrate 1 through the second purgingunit 123. Afterwards, a first layer that contains the first and secondraw materials may be finally formed on the substrate 1 by pumpingthrough the second exhausting unit 122.

The second curtain unit 124 is formed close to another first region 110that is located next to the second curtain unit 124 based on a movingdirection of the substrate 1. The second curtain unit 124 injects acurtain gas that does not affect the deposition process.

Also, in the current embodiment, a deposition process is performed by arelative movement of the substrate 1 with respect to the vapordeposition apparatus 100. At this point, the second curtain unit 124 isformed close to the first region 110 located next to the second curtainunit 124 based on a moving direction of the substrate 1 to block mixingof a material generated from or injected to the second region 120 and amaterial generated from or injected to the first region 110 locatedright side of the second region 120.

Also, a first blocking unit B 132 is formed to separate the secondexhausting unit 122 from the second injecting unit 130 formed adjacentto the second exhausting unit 122, and to separate the second exhaustingunit 122 from the second purging unit 123. That is, the secondexhausting unit 122 and the second injecting unit 130 do not have acommon region, and also, the second exhausting unit 122 and the secondpurging unit 123 do not have a common region.

Similarly, a second blocking unit B 142 may be formed between the secondinjecting unit 130 and other adjacent gas injecting units, and a thirdblocking unit B 152 may be formed between the second purging unit 123and the second curtain unit 124.

Hereinafter, a method of operating the vapor deposition apparatus 100described above will be briefly described.

The substrate 1 moves in an X direction of FIG. 1 under the vapordeposition apparatus 100. For this movement, the substrate 1 is mountedon a stage, and the substrate 1 mounted on the stage may be movedthrough a driving unit. Also, the vapor deposition apparatus 100 may bemoved in the −X direction instead of moving the substrate 1.

In the first region 110, a first raw material is injected towards thesubstrate 1 through the first injecting unit 111. For example, the firstraw material may be a gas that contains Al atoms such as trimethylaluminium (TMA), but not limited thereto.

A chemical adsorption layer and a physical adsorption layer are formedby the first raw material on an upper surface of the substrate 1. Of theadsorption layers formed on the upper surface of the substrate 1, thephysical adsorption layer that has a weak molecular bonding force isseparated from the substrate 1 by a purge gas injected from the firstpurging unit 113, and is effectively removed from the substrate 1through pumping of the first exhausting unit 112. Accordingly, thepurity of a deposition layer that will be finally formed on thesubstrate 1 may be increased.

In addition, the first blocking unit A 131 is formed between the firstexhausting unit 112 and the first purging unit 113 and between the firstexhausting unit 112 and the first injecting unit 111. Therefore, thepumping effect of the first exhausting unit 112 may affect the firstinjecting unit 111 and the first purging unit 113.

The substrate 1 sequentially moves to the second region 120, and asecond raw material is injected onto the substrate 1 through the secondinjecting unit 130 of the second region 120. At this point, the firstregion 110 and the second region 120 are effectively separated by thefirst curtain unit 114 of the first region 110. Since the first region110 and the second region 120 are protected (separated) from each other,the mixing of an unwanted material in each of the deposition processesis blocked.

The second raw material in a radical form that is generated from theplasma generation space 230 is injected into the second region 120.

As described above, the plasma generation space 230 is formed betweenthe plasma generator 210 and the corresponding surface 220, anddistances between the plasma generator 210 and the corresponding surface220 are periodically changed along an outer circumference of the plasmagenerator 210. Therefore, plasma may be stably generated in the plasmageneration space 230. Accordingly, the occurrence of an arc discharge isreduced or prevented, and thus, the uniformity of the second rawmaterial may be increased.

The second raw material may include, for example, oxygen radicals. Theoxygen radicals are formed by injecting H₂O, O₂, N₂O, etc. into theplasma generation space 230. The second raw material reacts with achemical adsorption layer that is already formed of the first rawmaterial by adsorbing in the substrate 1 or substitutes a portion of thechemical adsorption layer, and thus, a final desired deposition layer,for example, an AlxOy layer is formed. At this point, an excessiveamount of the second raw material remains as a physical adsorptionlayer.

A purge gas is injected onto the substrate 1 from the second purgingunit 123 to separate the physical adsorption layer remaining on theupper surface of the substrate 1. Also, the physical adsorption layerseparated from the substrate 1 is effectively removed from the substrate1 by the pumping of the second exhausting unit 122, and thus, the purityof a deposition layer to be finally formed on the substrate 1 isincreased. At this point, the directionalities of the second rawmaterial injected from the second injecting unit 130 and the purge gasinjected from the second purging unit 123 are not affected by thepumping of the second exhausting unit 123 since the first blocking unitsB 132 are formed.

In this way, a desired single atomic layer is formed on the substrate 1while passing through the first region 110 and the second region 120.

FIGS. 4 through 6 are modified versions of the plasma generation unit ofthe vapor deposition apparatus 100 of FIG. 1.

In the drawings of FIGS. 4 through 6, the plasma generator 210, thecorresponding surface 220, and the plasma generation space 230 are thesame as those described with reference to FIG. 2, and thus, thedescriptions thereof will not be repeated, but will be described mainlywith regard to the differences.

First, in the plasma generation unit 200B, the plasma generator 210 hasa rod shape, and a plurality of protrusions 222 are formed on thecorresponding surface 220. Thus, distances between the plasma generator210 and the corresponding surface 220 are periodically changed along anouter circumference of the plasma generator 210.

More specifically, the protrusions 222 extend in a length direction ofthe plasma generator 210, may be formed as one integral body with thecorresponding surface 220, and may form a regular pattern having thesame shape. In particular, since the protrusions 222 include a curvedsurface with a set or predetermined curvature, uniform plasma may beformed in the plasma generation space 230. Also, plasma nonuniformitydue to an arc discharge that occurs by minute protrusions thatinevitably generated during a manufacturing process of the plasmagenerator 210 or the corresponding surface 220 may be reduced orminimized.

The numbers of protrusions 222 and shapes may be appropriately selectedin consideration of the intensity of a current that is applied to theplasma generator 210 and the distances between the plasma generator 210and the corresponding surface 220.

Referring to FIG. 5, first protrusions 214 are formed on a surface ofthe plasma generator 210 and also, matching second protrusions 224 areformed on the corresponding surface 220. Since each of the firstprotrusions 214 and the second protrusions 224 have a regular pattern,distances between the plasma generator 210 and the corresponding surface220 are regularly changed along an outer circumference of the plasmagenerator 210.

In the plasma generation unit 200C of FIG. 5, the first protrusions 214and the second protrusions 224 are formed to face each other (e.g., todirectly face each other), and thus, positions and widths where plasmais generated are clearly seen.

The plasma generator 210 may rotate in a direction. In particular, whena voltage is applied to the plasma generator 210, the cooling of theplasma generator 210 and on/off of power as well may be controlled bythe rotation of the plasma generator 210. Since an electric field E isobtained by dividing a voltage V by a distance d between two electrodes,the electric field E has a maximum value at a point where the firstprotrusions 214 and the second protrusions 224 directly face each other.By using this fact, the plasma generator 210 may be cooled and thegeneration of plasma may be automatically stopped by turning off avoltage being applied to the plasma generator 210 at the point where thefirst protrusions 214 and the second protrusions 224 directly face eachother. However, the present invention is not limited thereto. That is,the voltage applied to the plasma generator 210 may be turned off at apoint where the first protrusions 214 and the second protrusions 224 arenot facing each other, e.g., when the electric field E has a minimumvalue.

In FIG. 6, like in FIG. 5, first protrusions 216 are formed on a surfaceof the plasma generator 210 and second protrusions 226 are formed on thecorresponding surface 220.

However, in FIG. 6, the first protrusions 216 and the second protrusions226 may be formed alternately.

As the first protrusions 216 and the second protrusions 226 are locatedalternately, uniform plasma is generated in all areas of the plasmagenerating space (230) and gas flow is restricted geometrically.Therefore, this type may be particularly useful when a sufficient plasmatreatment or decomposition is necessary while passing through a singleplasma region.

Like the plasma generation unit 200C of FIG. 5, also in the plasmageneration unit 200D of FIG. 6, when a voltage is applied to the plasmagenerator 210, the cooling of the plasma generator 210 and the on/off ofpower as well may be controlled by the rotation of the plasma generator210.

Constituent elements depicted in the drawings may be exaggerated orreduced for convenience of explanation. Therefore, the present inventionshould not be construed as the sizes or shapes of the constituentelements in the drawings. While the present invention has beenparticularly shown and described with reference to exemplary embodimentsthereof, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope of the present invention as definedby the following claims, and equivalents thereof.

What is claimed is:
 1. A vapor deposition apparatus comprising: a firstregion having a first injecting unit configured to inject a first rawmaterial; and a second region having a second injecting unit configuredto inject a second raw material, wherein: the second injecting unitcomprises a plasma generation unit, the plasma generation unit comprisesa plasma generator, a corresponding surface surrounding the plasmagenerator, and a plasma generation space formed between the plasmagenerator and the corresponding surface, and distances between theplasma generator and the corresponding surface periodically vary alongan outer circumference of the plasma generator.
 2. The vapor depositionapparatus of claim 1, wherein a plurality of protrusions are formed on asurface of the plasma generator, and the protrusions form a regularpattern.
 3. The vapor deposition apparatus of claim 1, wherein aplurality of protrusions are formed on the corresponding surface, andthe protrusions form a regular pattern.
 4. The vapor depositionapparatus of claim 1, wherein a plurality of first protrusions areformed on a surface of the plasma generator and a plurality of secondprotrusions are formed on the corresponding surface, wherein the firstprotrusions and the second protrusions form a regular pattern.
 5. Thevapor deposition apparatus of claim 4, wherein the first protrusions andthe second protrusions are located to directly face each other.
 6. Thevapor deposition apparatus of claim 4, wherein the plasma generator isconfigured to rotate and automatically stop the generation of plasma ata position where the first protrusions and the second protrusionsdirectly face each other.
 7. The vapor deposition apparatus of claim 4,wherein the first protrusions and the second protrusions are locatedalternately.
 8. The vapor deposition apparatus of claim 1, wherein thefirst region comprises a first purging unit configured to inject a purgegas, and a first exhausting unit configured to perform a pumpingoperation and disposed between the first injecting unit and the firstpurging unit.
 9. The vapor deposition apparatus of claim 8, wherein thefirst region further comprises a first curtain unit disposed between thefirst purging unit of the first region and the second injecting unit ofthe second region.
 10. The vapor deposition apparatus of claim 1,wherein the second region comprises a second purging unit configured toinject a purge gas and a second exhausting unit configured to perform apumping operation and disposed between the second injecting unit and thesecond purging unit.
 11. The vapor deposition apparatus of claim 10,wherein the second region further comprises a second curtain unit, thesecond purging unit being disposed between the second exhausting unitand the second curtain unit.
 12. The vapor deposition apparatus of claim1, wherein the second injecting unit further comprises a plurality ofslits arrayed in one direction and formed to pass the second rawmaterial in a radical form generated in the plasma generation space. 13.A vapor deposition apparatus comprising: a plurality of first regions,each of the plurality of first regions comprises a first injecting unitconfigured to inject a first raw material, a first purging unitconfigured to inject a purge gas, and a first exhausting unit configuredto perform a pumping operation and disposed between the first injectingunit and the first purging unit; and a plurality of second regions, eachof the plurality of second regions comprises a second injecting unitconfigured to inject a second raw material, a second purging unitconfigured to inject a purge gas, and a second exhausting unitconfigured to perform a pumping operation and disposed between thesecond injecting unit and the second purging unit, wherein: the secondinjecting unit comprises a plasma generation unit, the plasma generationunit comprises a plasma generator, a corresponding surface surroundingthe plasma generator, and a plasma generation space formed between theplasma generator and the corresponding surface, and protrusions areformed on at least one of a surface of the plasma generator or thecorresponding surface.
 14. The vapor deposition apparatus of claim 13,wherein the protrusions form a regular pattern.
 15. The vapor depositionapparatus of claim 13, wherein the protrusions comprise firstprotrusions formed on the surface of the plasma generator, and secondprotrusions formed on the corresponding surface, and wherein the firstprotrusions and the second protrusions form a regular pattern.
 16. Thevapor deposition apparatus of claim 15, wherein the first protrusionsand the second protrusions are formed to directly face each other. 17.The vapor deposition apparatus of claim 15, wherein the plasma generatoris configured to rotate and automatically stop the generation of plasmaat a position where the first protrusions and the second protrusionsdirectly face each other.
 18. The vapor deposition apparatus of claim15, wherein the first protrusions and the second protrusions are locatedalternately.
 19. The vapor deposition apparatus of claim 13, wherein thesecond injecting unit further comprises a plurality of slits arrayed inone direction and configured to pass the second raw material in aradical form generated in the plasma generation space.
 20. The vapordeposition apparatus of claim 13, further comprising: a first curtainunit disposed between the first purging unit of the first region and thesecond injecting unit of the second region; and a second curtain unitdisposed between the second purging unit of the second region and thefirst injecting unit of the first region.
 21. The vapor depositionapparatus of claim 13, wherein the first regions and the second regionsare alternately disposed with each other.